The invention and development of solid-state semiconductors (transistors) has a long history of milestones:
The German physicist Julius Edgar Lilienfeld filed a patent for a field-effect transistor in Canada in 1925, intended as a solid state substitute for the electron tube (triode). However, as the production of high-quality semiconductor materials took decades to complete, Lilienfeld's idea was not put into practice in the 1920s and 1930s. In 1934, an other German inventor, Oskar Heil, had a similar component patented in Europe. In 1947, John Bardeen and Walter Brattain performed experiments in the Bell Labs of AT&T (USA) and observed an amplifying effect when two gold point contacts were applied to a germanium crystal. William Shockley recognized the potential in this and worked to significantly expand knowledge of semiconductors (in recognition of this achievement, Shockley, Bardeen and Brattain jointly received the 1956 Nobel Prize in Physics). In 1948, the point contact transistor was independently invented by the German physicists Herbert Matare and Heinrich Welker at the Compagnie des Freins et Signaux. The first bipolar transistors were patented by William Shockley of Bell Labs 1948. Bell Labs chemists Gordon Teal and Morgan Sparks 1950 successfully completed a functioning bipolar NPN junction. The first high-frequency transistor was the surface barrier germanium transistor developed by Philco (USA) in 1953, which could operate up to 60 MHz.
As an application of the reinforcing properties of the transistors, small portable Receiver without tubes (valves) could now be developed. The first pocket transistor radio (as a prototype) was presented by Intermetall (founded by Matare in 1952) at the Düsseldorf International Consumer Electronics Fair in 1953. The first commercial pocket transistor radio was the Regency TR-1 (Joint Venture of IDEA and Texas Instruments), which was launched 1954. Countless transistor radios followed.
As a young radio hobbyist in the 1970s, I was able to exploit not only tube sets but also transistor sets (the transistors in the trade at that time were still very expensive) and start my own experiments with the diodes and transistors. Some specimens of that time have survived and were refound in my various hobby scrap boxes. A small selection is shown below.
OC71 6 KG Inertial release: 1954 AF Amplifier Glass encapsulation |
OC71 T5 P4 Inertial release: 1954 AF Amplifier Glass encapsulation |
OC72 D8 C6 Inertial release: 1954 AF output stage Glass + alu cover |
OC72 UIkX Inertial release: 1954 AF output stage Metal cover |
OC44 Z2 ZD Inertial release: 1956 RF transistor, mixer Glass encapsulation |
OC45 4MD Inertial release: 1956 IF amplifier Glass encapsulation |
OC45 R2 kA Inertial release: 1956 IF amplifier Glass encapsulation |
OC75 5 KH Inertial release: 1957 AF amplifier Glass encapsulation |
2N219 7J RCA Inertial release: 1957 RF transistor Metal package |
CV7005 K/B NTN 7528 Inertial release: 19xx AF Amplifier Metal package |
OC81 Mullard Inertial release: 1957 AF output stage Metal cover |
OC81D Mullard Inertial release: 1957 AF driver stage Glass + platic sleeve |
OC171 81 mH Inertial release: 1959 RF up to 75 MHz Metal can with shield lead |
AC107 Ge PNP Inertial release: 1959 AF input stages Glass encapsulation |
AC125 Ge PNP Inertial release: 1960 AF input stages AF driver stages Metal package |
AC126 Ge PNP Inertial release: 1960 AF input stages AF driver stages Metal package |
AC127 Ge NPN (!) Inertial release: 1963 AF output stages Compl. to AC132 Metal package |
AC128 Ge PNP Inertial release: 1960 AF output stages Metal package |
AC132 E Ge PNP Inertial release: 1963 AF output stages Compl.to AC127 Metal package |
AC151r VII X11 Siemens Ge PNP Inertial release: 1962 Low noise AF stages AF preamplifier Metal package |
AF201C
4Y Siemens Ge PNP Inertial release: 1963 RF transistor TV IF stages Metal package |
AF121 A10 Siemens Ge PNP Inertial release: 1964 RF transistor IF amplifier, Mixer Metal package |